In-plane visible light communication made with InGaN turning mirror

The refractive index contrast between AlGaN and InGaN leads to the formation of an optically-confined InGaN waveguide structure. Therefore, we propose a simple fabrication procedure to achieve on-chip photonic integration including a light source, waveguide, beam splitter, turning mirror and photodiode on an III-nitride-on-silicon platform. By inserting InGaN/GaN multiple-quantum-well active layer inside the InGaN waveguide, the emitted light is confined and coupled to the light waveguide. The in-plane light propagation that is directly observed due to the visible light emission is manipulated by the beam splitter and turning mirror. The waveguide-splitter-mirror-integrated III-nitride photonic circuit experimentally demonstrates an in-plane data transmission at 50 Mbps using visible light, suggesting its great potential for diverse applications in on-chip power monitoring, high-resolution blue printing and in-plane light communication.