Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5449261 | Optics Communications | 2017 | 4 Pages |
Abstract
In this work, a tunable broadband near-infrared light absorber was designed and fabricated with a simple and lithography free approach by introducing an ultrathin phase-change material Ge2Sb2Te5 (GST) layer into the metal-dielectric multilayered film structure with the structure parameters as that: SiO2 (72.7 nm)/Ge2Sb2Te5 (6.0 nm)/SiO2 (70.2 nm)/Cu (>100.0 nm). The film structure exhibits a modulation depth of â¼72.6% and an extinction ratio of â¼8.8 dB at the wavelength of 1410 nm. The high light absorption (95%) of the proposed film structure at the wavelength of 450 nm in both of the amorphous and crystalline phase of GST, indicates that the intensity of the reflectance in the infrared region can be rapidly tuned by the blue laser pulses. The proposed planar layered film structure with layer thickness as the only controllable parameter and large reflectivity tuning range shows the potential for practical applications in near-infrared light modulation and absorption.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Er-Tao Hu, Tong Gu, Shuai Guo, Kai-Yan Zang, Hua-Tian Tu, Ke-Han Yu, Wei Wei, Yu-Xiang Zheng, Song-You Wang, Rong-Jun Zhang, Young-Pak Lee, Liang-Yao Chen,