Analysis of light emission performance of pseudoheterostructure diode based on germanium micro-bridge

We present an electrically driven pseudoheterostructure diode based on germanium micro-bridge structure, and investigate the electrical transport, internal quantum efficiency and transparency current density of the diode. The effects of injected carrier density and uniaxial tensile strain on intervalence band absorption is also discussed. The injected carrier is well confined in the diode with uniaxial strain around 4%. An internal quantum efficiency around 9% and transparency current density of 5.8kA/cm2 can be obtained with doping density of 5×1018cm−3 and transparency carrier density of 2×1018cm−3 when uniaxial tensile strain is 4%. The result indicates the pseudoheterostructure diode based on the Ge micro-bridge can be used to realize an efficient electrically driven Si-based light emission source.