Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5449734 | Optics Communications | 2017 | 5 Pages |
Abstract
The dynamic behavior of thermally-induced metal-insulator transition of V2O3 thin film on Si substrate grown by reactive magnetron sputtering was investigated by the terahertz time-domain spectroscopy. It was found that the THz absorption and optical conductivity of the thin films are temperature-dependent, and the THz amplitude modulation can reach as high as 74.7%. The complex THz optical conductivity in the metallic state of the V2O3 thin films can be well-fitted by the Drude-Smith model, which offer the insight into the electron transport dynamic during the metal-insulator transition of the thin film.
Related Topics
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Authors
Y.Y. Luo, F.H. Su, C. Zhang, L. Zhong, S.S. Pan, S.C. Xu, H. Wang, J.M. Dai, G.H. Li,