Electronic transport properties of T-shaped silicene nanoribbons

Based on the tight-binding model and a generalized Green's function method, we theoretically investigated the electron transport properties of T-shaped silicene nanoribbons (TsSiNRs) structure composed of an armchair SiNR (ASiNR) with a sidearm connected to two semi-infinite ASiNR leads. In particular, we demonstrated that the transport properties sensitively depend on the sidearm width and length. Besides, we found that the metal to semiconductor transition occurs with the increase of the spin-orbit interaction (SOI) strength. The effect of the external perpendicular electric field on electron transport is also investigated and it is found that potential energy causes to the decrease of the energy gap leading to semiconductor to metallic transition.