Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5449993 | Physica E: Low-dimensional Systems and Nanostructures | 2017 | 4 Pages |
Abstract
We investigate the photoconductivity of a n+-ZnO/n-Ge NCs/p+-GaAs junction where the active layer consists of heavily n-doped Ge NCs synthesized in the gas phase. Measurement of a significant current at energies smaller than the band gap of GaAs demonstrates the photogeneration of charge carriers by the Ge NCs. From the correlation of the NC size with the absorption threshold, a narrowing of the direct band gap in the Ge NC thin film is obtained and attributed to the heavy doping of the Ge NCs. A remarkably high electrical activation of ~15% is found for the incorporated P impurities in the NCs.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Y. Lambert, Y. Gao, X.D. Pi, B. Grandidier, D. Stiévenard,