Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5449999 | Physica E: Low-dimensional Systems and Nanostructures | 2017 | 5 Pages |
Abstract
We report electronic structure of 1T-ZrS2 monolayer with biaxial strain from â10% to 15%, basing the first principles calculations. Our calculation results indicate that the band structure of ZrS2 monolayer was changed clearly. The location of conduction band minimum (CBM) and valence band maximum (VBM) changed with the variation of isotropic strain. At compressive strain, the location of CBM and VBM retains at M and Î point, respectively. The band gap of ZrS2 monolayer decreases from 1.111Â eV to 0Â eV when compressive strain increases from 0% to â8%, which means that the ZrS2 monolayer turns to metal at â8% compressive strain. Under the tensile strain, the ZrS2 monolayer also retains be an indirect band gap semiconductor. The location of CBM moves from M to Î point and the location of VBM moves along Î-A-K-Î direction. The band gap of ZrS2 monolayer firstly increases and then decreases and the biggest band gap is 1.577Â eV at tensile strain 6%. We can see the compression strain is more effective than tensile strain in modulating band gap of 1T-ZrS2 monolayer.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Qianqian Xin, Xu Zhao, Xu Ma, Ninghua Wu, Xiaomeng Liu, Shuyi Wei,