| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5450169 | Physica E: Low-dimensional Systems and Nanostructures | 2017 | 4 Pages |
Abstract
We report a facile method to prepare thin film of Si nanocrystals embedded SiO2 (Si-NC:SiO2) by annealing a photoresist of hydrogen silsesquioxane (HSQ) at 1100 °C in nitrogen via a phase separation process. The spatial density, photoluminescence intensity, the photoluminescence efficiency and electroluminescence intensity of Si-NC of the sample made from HSQ, or HSQ sample, were 15.0, 5.5, 1.5 and 7.9 times as large as those of the sample made by a traditional method of annealing SiOx (1
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Chi Zhang, Dong-Chen Wang, Zhi-Quan Zhou, Fei Hu, Ming Lu,