Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5451091 | Solar Energy | 2017 | 6 Pages |
Abstract
Impact of Cu/(Ge + Sn) composition ratio of Cu2Sn1âxGexS3 (CTGS, x = 0.00-0.07) films on their physical properties and photovoltaic performances is investigated. The CTGS thin films are fabricated by sputtering depositions of Cu/SnS2 stacked precursors and then the sulfurization in S and GeS2 vapors under 550 °C for 1 h in N2 flow. The Cu/(Ge + Sn) ratio is varied by changing Cu precursor thickness. It is revealed that GeS secondary phase is formed in the resulting CTGS films with the Cu/(Ge + Sn) ratios below 1.72, while Cu4SnS4 secondary phase is detected with the Cu/(Ge + Sn) ratios above 1.83. The single phase in bulk of CTGS films are attained with the Cu/(Ge + Sn) ratios in the range of 1.72-1.83. In addition, CTGS solar cells with different Cu/(Ge + Sn) ratios are fabricated. As a result, a 3.77%-efficient CTGS solar cell is obtained with the optimized Cu/(Ge + Sn) ratio of 1.83. An increased open-circuit voltage is attributed to the single phase CTGS film, thus decreasing the carrier recombination, and the enhanced short-circuit current density is feasibly caused by the decrease in carrier density of CTGS absorber.
Related Topics
Physical Sciences and Engineering
Energy
Renewable Energy, Sustainability and the Environment
Authors
Kazuki Hamamura, Jakapan Chantana, Koichi Suzuki, Takashi Minemoto,