| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5451610 | Journal of Materials Science & Technology | 2017 | 4 Pages |
Abstract
MnGa films were grown by magnetron sputtering on thermally oxidized Si (Si/SiO2) and glass substrates. Films grown on single-crystal Si (100) substrate with different underlayers were prepared for comparison. It is found that the Si/SiO2 substrate is more suitable for growing high-coercivity MnGa films than the glass substrate, which is the result of the isolated-island-like growth. A coercivity of 9.7âkOe can be achieved for the 10ânm MnGa films grown on Si/SiO2 substrate at substrate temperature TS of 450â°C. Optimized experimental conditions are specified by changing the thickness of the MnGa films and the temperature of the substrates.
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Authors
J.N. Feng, W. Liu, W.J. Gong, X.G. Zhao, D. Kim, C.J. Choi, Z.D. Zhang,