Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5451682 | Journal of Materials Science & Technology | 2017 | 20 Pages |
Abstract
In the current work, in situ surface passivation Ge substrate by using trimethylaluminum (TMA) prior to HfTiO films deposition and electrical properties of HfTiO/Ge gate stacks have been investigated by X-ray photoelectron spectroscopy (XPS) and electrical measurements systematically. Based on analysis from XPS measurements, it has been confirmed that the interfacial layer of HfTiO/Ge gate stack has been suppressed effectively after 20 half-ALD cycles TMA pretreatment. Electrical properties of metal-oxide-semiconductor (MOS) capacitor based on HfTiO gate dielectrics have shown that the MOS capacitor with 20 cycles TMA cleaning exhibits the lowest interface state density (â¼7.56Â eVâ1Â cmâ2) and the smallest leakage current (â¼2.67Â ÃÂ 10â5Â A/cm2). Correspondingly, the leakage current conduction mechanisms for MOS capacitor device with 20 cycles TMA cleaning also have been discussed in detail.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Chemistry
Authors
Juan Gao, Gang He, Dongqi Xiao, Peng Jin, Shanshan Jiang, Wendong Li, Shuang Liang, Li Zhu,