Article ID Journal Published Year Pages File Type
5451682 Journal of Materials Science & Technology 2017 20 Pages PDF
Abstract
In the current work, in situ surface passivation Ge substrate by using trimethylaluminum (TMA) prior to HfTiO films deposition and electrical properties of HfTiO/Ge gate stacks have been investigated by X-ray photoelectron spectroscopy (XPS) and electrical measurements systematically. Based on analysis from XPS measurements, it has been confirmed that the interfacial layer of HfTiO/Ge gate stack has been suppressed effectively after 20 half-ALD cycles TMA pretreatment. Electrical properties of metal-oxide-semiconductor (MOS) capacitor based on HfTiO gate dielectrics have shown that the MOS capacitor with 20 cycles TMA cleaning exhibits the lowest interface state density (∼7.56 eV−1 cm−2) and the smallest leakage current (∼2.67 × 10−5 A/cm2). Correspondingly, the leakage current conduction mechanisms for MOS capacitor device with 20 cycles TMA cleaning also have been discussed in detail.
Related Topics
Physical Sciences and Engineering Materials Science Materials Chemistry
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