| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5451913 | Nano Energy | 2017 | 22 Pages |
Abstract
TOC: Key observation on the ferroelectric resistive switching in highly strained BiFeO3thin film based switchable diode. Utilizingin situelectrical TEM, movement of the phase boundary, and the phase transition are revealed along with ferroelectric polarization reversal. The change of resistance is suggested to the result of the polarization reversal between various states, composed of R- and T-like phases, which is verified by enhancement of displacement current output and explained by variation of Schottky barrier height. This result demonstrates the promising potential for high-density universal memory.303
Related Topics
Physical Sciences and Engineering
Energy
Energy (General)
Authors
Chung-Hua Chiu, Chun-Wei Huang, Ying-Hui Hsieh, Jui-Yuan Chen, Chia-Fu Chang, Ying-Hao Chu, Wen-Wei Wu,