Precursor designs for Cu2ZnSn(S,Se)4 thin-film solar cells

An indiscrete layer was chosen as a precursor stacking order design, which enabled the suppression of the overly rich Zn zone during a relatively low-temperature annealing process, thus preventing the formation of Zn-rich detrimental secondary phases and defects in these regions. A higher PCE and a uniform composition ratio distribution, which helped to realize uniform characteristics across the solar cell, were obtained.441