Electrical transportation and piezotronic-effect modulation in AlGaN/GaN MOS HEMTs and unpassivated HEMTs

We present empirical evidence that SiO2/AlGaN/GaN MOS HEMTs outperform the unpassivated AlGaN/GaN HEMTs with DC performances. The piezotronic effect is then introduced to modulate the drain current of HEMTs by applying external stresses on the devices effectively. This study provides in-depth comprehension into working principle of the piezotronic effect modulating physical properties of 2DEG in AlGaN/GaN hetero structures as well as guidance for the potential application in HEMT and MEMS/NEMS devices.150