Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5452943 | Computational Condensed Matter | 2017 | 10 Pages |
Abstract
The electronic transport properties of zigzag nanoribbons (ZGNRs) with V-shaped notches on the edges have been investigated by a first-principles method. It is found that for ZGNRs with medium and large-sized V-shaped notches, an obvious threshold of the bias voltage can be observed in the I-V curve, which does not appear in pristine ZGNRs and small-sized V-shaped ZGNRs. Therefore, a method to convert ZGNR to semiconductor with considerable energy gap is suggested by introducing V-shaped notches with appropriate size on the edges. Moreover, the electronic conductivity of ZGNRs with medium-sized V-shaped notches is found to be superior to pristine, small and large-sized V-shaped-notched ZGNRs under high bias voltages. The difference in the electronic transport of these four systems is analyzed in terms of projected density of states and MPSH eigenstates.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Wen Liu, Fanhua Meng, Changfeng Fang, Jianhua Zhao, Jie Cheng, Xiaohui Jiang,