| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5457070 | Micron | 2017 | 7 Pages |
Abstract
We report on a direct measurement of cation and anion sub-lattice strain in an InAs/GaSb type-II strained layer superlattice (T2SLs) using atomic resolution imaging and advanced image processing. Atomic column positions in InAs and GaSb are determined by separating the cation and anion peak intensities. Analysis of the InAs/GaSb T2SLs reveals the compressive strain in the nominal GaSb layer and tensile strain at interfaces between constituent layers, which indicate In incorporation into the nominal GaSb layer and the formation of GaAs like interfaces, respectively. The results are compared with the model-dependent X-ray diffraction measurements in terms of interfacial chemical intermixing and strain. Together, these techniques provide a robust measurement of atomic-scale strain which is vital to determine T2SL properties.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Honggyu Kim, Yifei Meng, Jean-Luc Rouviére, Jian-Min Zuo,