| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 5457245 | Solid State Communications | 2017 | 11 Pages | 
Abstract
												geometrical pattern of phosphorus impurities in the GNS. Furthermore, I found out that there is an electronic band gap with a single phosphorus impurities and it is increased with increasing the concentrations of phosphorus impurities. Also, total energy is affected and decreased with increasing the concentrations of phosphorus impurities, which is led to make all structures are unstable and more reactive. Then, phosphorus impurities are significantly contributing to engineering, control and alter the electronic properties of the GNS, which is very important in various applications.
											Keywords
												
											Related Topics
												
													Physical Sciences and Engineering
													Materials Science
													Materials Science (General)
												
											Authors
												Mohammed H. Mohammed, 
											