| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5457330 | Solid State Communications | 2017 | 4 Pages |
Abstract
We have measured the absorption and Raman spectral change induced by the irradiation of e-beam. By the irradiation of e-beam on SWNTs thin films, the intensity of defect related Raman band increase, and the peak energy of IR absorption bands shift to the higher energy side. These results indicate that the origin of infrared band is due to the plasmon resonance of finite-length SWNT. We have estimated the effective tube length and defect density from IR absorption peak energy.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Masao Ichida, Katsunori Nagao, Yuka Ikemoto, Toshiya Okazaki, Yasumitsu Miyata, Akira Kawakami, Hiromichi Kataura, Ikurou Umezu, Hiroaki Ando,