| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5457343 | Solid State Communications | 2017 | 8 Pages |
Abstract
We formulate a microscopic model describing interaction between photoinjected carriers and optical phonons in monolayer transition-metal dichalcogenides which are an important example of 2D direct-bandgap semiconductors. The model takes account of the spin-valley structure of the conduction and valence bands. The evolution equations for the carrier and phonon quasi-temperatures are derived and the carrier-phonon relaxation time is estimated. We present the experimental pump-probe results for monolayer WSe2 conforming the theoretical prediction.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
V.G. Morozov, C. Dekeyser, N. Ilyin, E. Mishina,