Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5457383 | Solid State Communications | 2017 | 16 Pages |
Abstract
Graphene on copper foil produced through chemical vapor deposition has been transferred to different substrates and the Raman signatures from graphene on semi-insulating GaAs, n-GaAs, SiO2 (300Â nm)/Si, boron-doped Si, phosphorus-doped Si have been studied. It is found that all the material varieties, morphology and lattice of substrates can influence the Raman scattering spectra from graphene. The obtained results are important for nanometrology of graphene and graphene based devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Yangyang Gui, Hengchao Sun, Hui Yan, Hao Wang, Yongzhe Zhang, Xue Mei Song, Rui Jia,