The collision frequency model of the solid state plasma for Si/Si1−xGex/Si SPiN device

A two dimensional(2D) collision frequency model is developed based on the 2D solid state plasma concentration distribution model and mobility model for a heterogeneous Si/Si1−xGex/Si structure SPiN(Surface PiN) devices, which are the basic radiating elements in the reconfigurable solid state plasma antenna. The lower collision frequency can be achieved when the Ge mole fraction x and applied voltage increase at the temperature T=300 K, and that the basically uniform distribution of collision frequency can be obtained for Ge mole fraction x=0.3. Moreover, radiation efficiency and the maximum gain of the antenna for the different collision frequency have also been studied. The proposed model can be a handful for the designing of the solid state plasma antenna.