Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5457739 | Intermetallics | 2017 | 5 Pages |
Abstract
Ternary compounds of Mg2Si1âxSbx (0 â¤Â x â¤Â 0.10) are prepared by a combination of liquid-solid reaction, ball milling, and spark plasma sintering. The carrier concentration of Mg2Si1âxSbx increases with the Sb content x and reaches 1.1 Ã 1021 cmâ3 at x = 0.10, which is approximately ten times higher than that previously reported. The high carrier concentration is attributed to the facilitation of Sb-doping by ball milling and the suppression of Mg vacancy formation by short-time sintering. No decrease in the carrier concentration of Mg2Si0.90Sb0.10 is observed after annealing at 773 K for 100 h in a semi-closed system, which suggests that the compound is stable at 773 K under a high partial pressure of Mg.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Daisuke Kato, Kouta Iwasaki, Masahito Yoshino, Tomoaki Yamada, Takanori Nagasaki,