| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5457986 | International Journal of Refractory Metals and Hard Materials | 2017 | 35 Pages |
Abstract
The current work aims at studying passive and electrochemical behavior of tantalum in KOH solutions of varied concentrations ranging from 0.01 to 1Â M using various electrochemical methods. Electrochemical impedance spectroscopy (EIS) results show that the passive film formed on tantalum loses its protectiveness upon addition of KOH concentration. Indeed, the passivity undergoes a drastic change moving toward higher KOH concentrations. The semiconductive behavior of the passive films formed on tantalum is also investigated by employing Mott-Schottky analysis in conjunction with point defect model (PDM). Although semiconducting behavior remains the same as n-type, KOH concentration greatly affects the levels of donor densities. Moreover, Mott-Schottky analysis showed that flat band potential is quite sensitive to KOH concentration.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Arash Fattah-Alhosseini, Farid Reza Attarzadeh, Saeed Vafaeian, Meysam Haghshenas, Mohsen K. Keshavarz,