Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5458031 | Journal of Alloys and Compounds | 2018 | 5 Pages |
Abstract
Series of GaN-based blue laser diodes (LDs) with different InxGa1-xN quantum barrier (QB) and lower waveguide (LWG) layers are investigated by using the two-dimension simulator LASTIP. It is found that a decrease slope efficiency is resulted when the indium content of InxGa1-xN quantum barrier (QB) layers is higher than about 1%, which is caused by the significantly increase of electron leakage current due to the piezoelectric polarization effect in high indium content InxGa1-xN last QB (LQB) layer. Therefore, an asymmetric MQW with a thin thickness of LQB is designed to lower the piezoelectric polarization effect and to reduce the electron leakage current. Meanwhile, a new LD structure with high InxGa1-xN LWG is also proposed to further reduce the optical loss. The two ways are useful to improve the slope efficiency.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Feng Liang, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Wei Liu, Shuangtao Liu, Yao Xing, Liqun Zhang, Wenjie Wang, Mo Li, Yuantao Zhang, Guotong Du,