Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5458045 | Journal of Alloys and Compounds | 2018 | 33 Pages |
Abstract
Titanium silicon nitride (TiSiN) thin films were deposited on p-type c-Si (100) with different N2 flow rate by using chemical vapor deposition (CVD) technique. The microstructure, phonon modes, mechanical properties and compositional study of TiSiN thin films were characterised by scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy, nanoindentation and X-ray photoelectron spectroscopy (XPS),respectively. The SEM images show increases in surface roughness with increasing of N2 flow rate, however, improves the hardness and Young's modulus of TiSiN thin film. The XRD analysis reveals the presence of strain in TiSiN films. The estimated crystallites of TiSiN thin films was 7.51 and 7.39Â nm for 40 and 100 sccm N2 flow rate. The XPS reveals the presence of 20Â at. % Si content at 40 sccm N2 flow rate in the TiSiN film. To analyse the broad Raman spectra of TiSiN thin films, the peaks were convoluted into six individual Gaussian peaks. The quantitative and qualitative analysis XPS and Raman spectra of TiSiN thin films were carried out by using Origin 9.0 software.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Spandan Guha, Soham Das, Asish Bandyopadhyay, Santanu Das, Bibhu P. Swain,