Growth conditions of semi and non-polar GaN on Si with Er2O3 buffer layer

The GaN was grown on Si(100) with Er2O3(110) buffer by metal organic chemical vapor deposition (MOCVD). The results showed the polycrystalline nature of the layers with dominant non-polar (11-20) and semi-polar (10-13) orientations. GaN was formed in a two step process regime: low temperature growth was followed by high temperature growth regime. At a low temperature GaN tends to crystalize with dominant non-polar (11-20) orientation, while high temperature leads to preferential semi-polar (10-13) orientation growth. Additionally, the effects of parameters such as growth temperature, V/III-ratio and type of carrier gases on structural, morphological and optical properties of GaN was discussed in the current work.