Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5458437 | Journal of Alloys and Compounds | 2017 | 26 Pages |
Abstract
Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Bo Zhang, Tao Zheng, Ce Sun, Zaibing Guo, Moon J. Kim, Husam N. Alshareef, Manuel Quevedo-Lopez, Bruce E. Gnade,