Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5458776 | Journal of Alloys and Compounds | 2017 | 29 Pages |
Abstract
From the viewpoint of intermediate-temperature solid oxide fuel cells (IT-SOFCs) application, except for excellent electrochemical performance, a satisfactory cathode must also meet excellent thermal expansion compatibility with other cell components. Therefore, in order to reduce the thermal expansion coefficient (TEC) value and improve catalytic activity of Sr(Co0.9Fe0.1)O3âδ oxide, we report our effort on perovskite-type Ga3+ doped SrCo0.8Fe0.1Ga0.1O3-δ (SCFG) oxide as cathode material for IT-SOFCs. In this work, SCFG cathode was prepared using an improved sol-gel method and its properties were characterized by powder X-ray diffraction (XRD), X-ray Photoelectron Spectra (XPS), thermal expansion coefficient (TEC), electrical conductivity, and electrochemical impedance spectroscopy (EIS). The SCFG powder showed the expected orthorhombic crystal structure. XPS analysis disclosed multi-valence states of the transition-metal cations in SCFG, i.e., [Sr2+][Co3+/Co4+]0.8[Fe3+/Fe4+]0.1[Ga3+]0.1O3âδ. The maximum conductivity of SCFG was 122 S cmâ1 at 800 °C. The average TEC value of the SCFG sample was 12.6 Ã 10â6 Kâ1 between room temperature and 1023 K, which is lower than the TEC of Sr(Co0.9Fe0.1)O3âδ cathode and is very similar to the value of the electrolyte. The Rp values of SCFG cathode on Ce0.8Sm0.2O1.9 (SDC) and La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolytes were 0.047 and 0.053 Ω cm2 at 800°C, respectively. The maximum power densities of a single-cell with SCFG cathode on 300 μm thick SDC electrolyte were 504, 335 and 193 mW cmâ2 at 800, 750 and 700 °C, respectively. These results indicate that SCFG oxide is a promising cathode material for IT-SOFCs duo to its good thermal expansion match with electrolyte and adequate electrochemical performance.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Xiangwei Meng, Sanlong Wang, Shiquan Lü, William W. Yu, Yingrui Sui, Lili Yang, Maobin Wei, Jian Cao, Jinghai Yang,