| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5459502 | Journal of Alloys and Compounds | 2017 | 33 Pages |
Abstract
Energy level scheme showing the 4f ground states of the trivalent (filled square) and divalent ions (filled circle) and lowest energy 5d states of the trivalent (open square) and divalent ions (open circle) relative to the valence and conduction band of Y4Si2O7N2. The red dashed horizontal line is the optical band gap of Y4Si2O7N2. The arrows (1-4) indicate the experimentally determined transitions used to construct this scheme.179
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Guo-Jun Wang, Dong-Jie Pan, Tao Xu, Guang-Xin Xiang, Zhi-Jun Zhang, Hubertus T. Hintzen, Jing-Tai Zhao, Yan Huang,