Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5459510 | Journal of Alloys and Compounds | 2017 | 7 Pages |
Abstract
Yttrium iron garnet (YIG) has great potential in the application of microwave devices and spintronics. However, the extremely high temperature for the growth of single crystalline YIG thin film on garnet substrate has being a barrier hindering its massive production and wide application, especially for some integrated devices which cannot bear high temperature for a long time. In this work, epitaxial single crystalline YIG thin films were successfully obtained by deposition on (111)-oriented gadolinium gallium garnet (GGG) at room temperature via RF sputtering followed by a short-time post-annealing treatment. Their structural and physical properties were carefully studied and compared with that of YIG/GGG(111) thin films deposited at high temperatures. The relatively large saturated magnetization (â¼120Â emu/cc) and a comparable linewidth (â¼55Â Oe) of those room-temperature-deposited YIG thin films can be achieved. This provides a viable alternative for growing YIG thin films on GGG or other garnet substrates.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Rong Ma, Ming Liu, Jiannong Wang, Hong Wang,