Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5459939 | Journal of Alloys and Compounds | 2017 | 33 Pages |
Abstract
The effect of tungsten (W6+) doping on modification of the structure, dielectric, ferroelectric and electrical properties of BaBi4Ti4-xWxO15 (BBTWx, x = 0, 0.03, 0.05 and 0.07) was investigated. The ceramic samples were synthesized by the conventional solid state reaction method. XRD data indicated the formation of single-phase layered crystalline structure that confirmed orthorhombic structure type of all compositions with space group A21am. SEM micrographs suggest that the grain size slightly decreases with W doping. The temperature dependent dielectric study revealed that the dielectric constant decreases with W doping while transition temperature slightly increases. Influence of tungsten on relaxor behavior and diffuseness of phase transition is also discussed. Effect of W doping on the dielectric and electrical properties were investigated in terms of ion doping and defect mechanism. The ferroelectric properties were studied by P-E hysteresis loop and it was observed that the remanent polarization increases with a small level of W doping.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
J.D. BobiÄ, R.M. Katiliute, M. Ivanov, N.I. IliÄ, A.S. DzunuzoviÄ, M.M. VijatoviÄ PetroviÄ, J. Banys, B.D. StojanoviÄ,