Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5460284 | Journal of Alloys and Compounds | 2017 | 9 Pages |
Abstract
Giant dielectric properties of materials have widely been reported in recent years. However, a simultaneously low dielectric loss tangent (tanδ) and high dielectric permittivity (Éâ²) with a low temperature coefficient (ÎÉâ²(T)/Éâ²RT) have been very difficult to achieve. In this work, high performance of giant dielectric properties were achieved in rutile-TiO2 ceramics by co-doping with acceptor-Sc3+ and donor-Nb5+ ions. The important role of the former dopant was to capture free electrons at internal insulating layers, playing as an acceptor. The latter dopant was used to produce free electrons. Ceramics that were 10% (Sc3++Nb5+) co-doped TiO2 (10%ScNTO) exhibited very low tanδâ0.016-0.035 and high Éâ²â103-104 values. By optimizing the sintering conditions, excellent temperature stability of Éâ² at 1 kHz with ÎÉâ²(T)/Éâ²RT < ±15% was obtained over a wide temperature range, meeting the requirement for use in X8R capacitors. Furthermore, the dielectric properties were slightly dependent on applied DC bias. Impedance spectroscopy analysis revealed that the ScNTO ceramics were electrically heterogeneous, consisting of semiconducting grains and very high insulating layers. The high-performance giant-dielectric properties of ScNTO ceramics were attributed to interfacial polarization at insulating layers with very high resistivity and large activation energy.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Wattana Tuichai, Supamas Danwittayakul, Narong Chanlek, Prasit Thongbai, Santi Maensiri,