Article ID Journal Published Year Pages File Type
5460458 Journal of Alloys and Compounds 2017 16 Pages PDF
Abstract
GaN:Dy films were prepared by implanting Dy ions into c-plane (0001) GaN films and a subsequent rapid thermal annealing process. The structural and magnetic properties of samples were investigated by means of X-ray diffraction (XRD), Raman and Physical Property Measurement System (PPMS). The XRD and Raman studies showed that lattice damage and dislocation caused by ion implantation can be effectively recovered by rapid thermal annealing. The PPMS results showed ferromagnetism at room temperature. The average value of the moment per Dy ion (Ms/Dy) is increased after thermal annealing. The available vacancies and formation of bound magnetic poloron as a result of implantation and thermal annealing are assigned responsible for observed ferromagnetism.
Related Topics
Physical Sciences and Engineering Materials Science Metals and Alloys
Authors
, , , , , , ,