| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5460566 | Journal of Alloys and Compounds | 2017 | 5 Pages |
Abstract
We report the formation of VZn-NO complex shallow acceptors in ZnO films. Through tellurium and nitrogen co-doping under O-rich growth condition, a TeZn-NO complex can be stably formed. A proper O-rich post-annealing process can make tellurium out of the films, and finally results in the formation of VZn-NO complex. This process has been evidenced by a set of characterization methods. Utilizing this approach, hole majority has been realized for a large windows of nitrogen concentration. Therefore, this study may help to advance the investigation on the p-type bottleneck of ZnO material.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Kun Tang, Shunming Zhu, Zhonghua Xu, Yang Shen, Jiandong Ye, Shulin Gu,