Article ID Journal Published Year Pages File Type
5460595 Journal of Alloys and Compounds 2017 15 Pages PDF
Abstract
Sb-doped p-type ZnO films were grown on sapphire substrate by metal organic chemical vapor deposition method. The influence of the molar ratio of Sb/Zn on the crystal, electrical and optical properties of the Sb-doped ZnO films was investigated by X-ray diffraction (XRD), Hall measurement system, optical absorption and photoluminescence spectroscopy. XRD patterns revealed all Sb-doped ZnO films were polycrystalline structures with strong c-axis orientation preferred. Electrical measurement results indicated Sb-doped ZnO films exhibited p-type electrical properties, and carrier concentrations were in the range of 10−17-10−18 cm−3. Low temperature photoluminescence measurement confirmed the existence of Sb in Sb-doped ZnO film. The photoluminescence spectrum of the Sb-doped ZnO film revealed the transition between the free electrons and acceptors peak at 3.243 eV, the acceptor-bound exciton peak at 3.319 eV and the donor-acceptor pair exciton at 3.200 eV. The thermal binding energy of the Sb accepter was estimated to be 0.19 eV.
Related Topics
Physical Sciences and Engineering Materials Science Metals and Alloys
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