Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5460625 | Journal of Alloys and Compounds | 2017 | 5 Pages |
Abstract
Nonmetal F and B co-doped ZnO (BFZO) thin films were deposited on flexible substrates by magnetron sputtering method and the electrical and optical properties of these films were studied. The resistivity of the prepared thin film was 1.64Â ÃÂ 10â3Â Â cm, the carrier mobility was 5.18Â cm2Â Vâ1Â sâ1, and the electron concentration was 7.99Â ÃÂ 1020Â cmâ3, and the square resistance was 81.9. First-principles calculations were used to explain the origin of high conductivity, and the results indicates that the structure is most stable when the F atom is close to the B atom in the (0110) plane, and the partial density of states of B-F co-doped ZnO shows that the B impurity plays a vital role in enhancing electrical properties.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Qin Li, Liping Zhu, Yaguang Li, Xiangyu Zhang, Wenzhe Niu, Yanmin Guo, Zhizhen Ye,