Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5460894 | Journal of Alloys and Compounds | 2017 | 14 Pages |
Abstract
MSM structure UV detectors were fabricated on mixed-phase MgZnO thin films with (200) cubic MgZnO/hexagonal MgZnO and (111) cubic MgZnO/hexagonal MgZnO interfaces by PLD method. Under 25Â V bias voltage, the maximum responsivity of the mix-phase MgZnO based detector with (002) cubic MgZnO/hexagonal MgZnO interfaces reached 8Â A/W at 256Â nm because of 3809% internal gain of the detector at solar-blind UV light, which is two order of magnitude bigger than the detector with (111) cubic MgZnO/hexagonal MgZnO interfaces. The higher density of interface states between (200) cubic and hexagonal MgZnO grains in the mix-phase MgZnO thin film is main reason for its big internal gain and high solar-blind UV response. The Idark of the mixed-phase MgZnO based detector with (111) cubic MgZnO/hexagonal MgZnO interfaces is much smaller and the Ilight/Idark of which is higher because of the higher interfaces barrier at (111) cubic MgZnO/hexagonal MgZnO interfaces, so the detector could effectively detect faint solar-blind UV signal more under strong noise background.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
S. Han, S.M. Liu, Y.M. Lu, P.J. Cao, W.J. Liu, Y.X. Zeng, F. Jia, X.K. Liu, D.L. Zhu,