Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5461097 | Journal of Alloys and Compounds | 2017 | 5 Pages |
Abstract
A practical way of adjusting post-sulfurization process with variable durations is proposed to improve the cell-conversion efficiency of non-toxic solution driven CuIn0.7Ga0.3Se2 absorber thin films. The degree of bandgap grading was controllable by changing the sulfurization time from 2Â min to 30Â min due to the dissimilar distribution of sulfur across the absorber layer. Deeper intensified distributions of Ga and S were responsible for enhancements in the open-circuit voltage and cell-conversion efficiency. A competitive efficiency of â¼8.81% for the 10 min-sulfurized CIGSSe cell was achieved with other promising parameters, i.e., short-circuit current density of 33.17Â mA/cm2, open-circuit voltage of 0.496Â V, and fill factor of 53.5%, resulting from the improved carrier collection and reduced recombination by the bandgap grading. This improved efficiency corresponds to a â¼15.6% enhancement compared to the unsulfurized sample.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Jin Woo Jang, Seung Min Lee, Ik Jin Choi, Yong Soo Cho,