Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5461284 | Journal of Alloys and Compounds | 2017 | 5 Pages |
Abstract
N-type thermoelectric materials PbTe doped with iodine (PbTe1âxIx, x = 0.0001, 0.0003, 0.0007 and 0.001) were synthesized by high pressure and high temperature method (HPHT). Thermoelectric properties of PbTe1âxIx are investigated in the range of 300-600 K. The carrier concentration of PbTe prepared by HPHT is more sensitive to I content compared to that of the PbTe1âxIx sample prepared by other methods. The resistivities and the absolute values of Seebeck coefficients for PbTe1âxIx increase while the thermal conductivities decrease with increasing temperature. A large power factor of 39.1 μW/(cmK2) at room temperature is obtained with the carrier concentration of 9.7 Ã 1018 cmâ3, which is much higher than that of Sb and Bi doped PbTe with the same synthesizing conditions. The high power factor is attributed to the high Hall mobility and large effective mass. The maximum figure-of-merit, â¼0.71 @ 600 K, is obtained for the samples with the carrier concentration of 9.7 Ã 1018 cmâ3.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Manman Yang, Hongyu Zhu, Hongtao Li, Taichao Su, Qiang Hu, Shangsheng Li, Meihua Hu, Baoli Du, Hongan Ma, Xiaopeng Jia,