Resistive random access memories fabricated by using solution-processed AlZnSnO semiconductor films and indium ball electrodes

Resistive random access memories (ReRAMs) using solution-processed AlZnSnO (AZTO) oxide semiconductor films as resistive switching layers were fabricated. Electrodes were prepared by applying Ag paste or by pressing indium balls onto the AZTO surface. Vacuum processes were not required. The resistive switching behavior was not found for the ReRAM using a Ag paste electrode. However, a significant resistive switching characteristic could be obtained when using an In ball as the electrode. In addition, by adjusting compliance current from 80 mA to 20 mA, a stable resistance difference between high and low resistance state of 1839 Ω could be obtained over 500 operations. The ReRAM also exhibited good data retention capability and read disturb immunity for at least 103 s. Physical mechanisms of current conduction and resistance switching behavior were also investigated.