Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5461431 | Journal of Alloys and Compounds | 2017 | 19 Pages |
Abstract
Ion doping is an effective approach to improve the properties of hybrid perovskite CH3NH3PbI3, such as chemical stability and solar absorption. Here Bi3+-doped CH3NH3PbI3 was synthesized via cooling crystallization process in aqueous solution. Along with the Bi3+ doping, the bandgap of CH3NH3PbI3 could be significantly narrowed, by the maximum value of 140 meV at the optimal doping level of 1.6 M %. Transient photovoltage measurement (TPV) revealed the Bi3+-doped CH3NH3PbI3 could achieve a charge carrier lifetime of 280 μs, which was almost twice longer than that of pristine CH3NH3PbI3 (157 μs). The prolonged carrier lifetime of Bi3+-doped CH3NH3PbI3 was supposed to be attributed to its lower packing factor (PF), which was caused by the CH3NH3+ vacancy (VMA) after doping This work provides a new approach to tune the band gap and charge carrier lifetime of the hybrid perovskite CH3NH3PbI3, which should be promising to further improve the performance of perovskite-based photovoltaic devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Ruiqi Wang, Xian Zhang, Jianqiao He, Cheng Ma, Li Xu, Peng Sheng, Fuqiang Huang,