Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5462530 | Materials Letters | 2018 | 10 Pages |
Abstract
Stress-free InN nanowires (NWs) have been grown on Au/graphene/GaN/sapphire substrate by atmospheric pressure metal-In sublimation method. The phonon E2(high) and A1(LO) mode in Raman spectra of InN grown on graphene is observed at 490.8 and 585â¯cmâ1 respectively, which is similar to that of bulk InN. The high resolution TEM (HRTEM) image of InN NWs shows that the interplanar spacing of (0 0 0 2) and (1 1 â2 0) are 2.85â¯Ã
and 1.77â¯Ã
, which is according with the XRD result. All the results confirm that Au-catalyst assists the growth of InN NWs, and the stress is released by the aid of the graphene inter-layer.
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Authors
Lin Chen, Yuewen Li, Xiangqian Xiu, Dingding Chen, Xuemei Hua, Zili Xie, Peng Chen, Bin Liu, Ping Han, Rong Zhang, Youdou Zheng,