Improved indium oxide transparent conductive thin films by hydrogen annealing

In2O3 thin films were prepared by reactive evaporation with post-annealing treatment at forming gas of N2 and H2. After post-annealing treatment, the films annealed at forming gas achieved lowest resistivity of 2.70 × 10−4 Ω cm. The XRD results show that the In2O3 films annealed in forming gas and N2 with good recrystallization. In the forming gas annealing process, hydrogen plays a key role in the generation of oxygen vacancies and enhances the formation of In-OH bond which may influence the electrical and optical properties of the In2O3 films.