| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5462833 | Materials Letters | 2017 | 4 Pages |
Abstract
BaTi1-x(In0.5Nb0.5)xO3 (x = 0, 0.01, and 0.03) ceramic samples were prepared using the conventional solid-state reaction method. The dielectric properties of these samples were investigated as a function of temperature (300 K â¤Â T â¤Â 700 K) and frequency (102 Hz â¤Â f â¤Â 106 Hz). Great enhancement of dielectric constant in the dual doped samples was found. Defect diploles of [NbTi5+-Ti3+] and [NbTi5+-InTi3+] were suggest to account for the enhancement of dielectric constant.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J. Sun, S.T. Wang, L. Tong, Q.J. Li, Y. Yu, Y.D. Li, S.G. Huang, Y.M. Guo, C.C. Wang,