Article ID Journal Published Year Pages File Type
5462864 Materials Letters 2017 11 Pages PDF
Abstract
Epitaxial a-, m-, and r-plane α-Ga2O3 thin films were successfully grown on a-, m-, and r-plane sapphire substrates through the insertion of α-Fe2O3 buffer layers using mist chemical vapor deposition. The α-Fe2O3 buffer layers improved the crystal growth of the α-Ga2O3 thin films. We reveal that the out-of-plane and in-plane orientations of each plane α-Ga2O3 thin film corresponded to that of each plane sapphire substrate. The direct bandgap of the α-Ga2O3 thin films from the optical transmittance and reflectance results of a-, m-, and r-planes was estimated to be 5.15-5.2 eV. The epitaxial α-Ga2O3 thin films on the various sapphire substrates are promising materials for power devices and deep ultraviolet region optoelectronic devices.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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