Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5462864 | Materials Letters | 2017 | 11 Pages |
Abstract
Epitaxial a-, m-, and r-plane α-Ga2O3 thin films were successfully grown on a-, m-, and r-plane sapphire substrates through the insertion of α-Fe2O3 buffer layers using mist chemical vapor deposition. The α-Fe2O3 buffer layers improved the crystal growth of the α-Ga2O3 thin films. We reveal that the out-of-plane and in-plane orientations of each plane α-Ga2O3 thin film corresponded to that of each plane sapphire substrate. The direct bandgap of the α-Ga2O3 thin films from the optical transmittance and reflectance results of a-, m-, and r-planes was estimated to be 5.15-5.2 eV. The epitaxial α-Ga2O3 thin films on the various sapphire substrates are promising materials for power devices and deep ultraviolet region optoelectronic devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hiroyuki Nishinaka, Daisuke Tahara, Shota Morimoto, Masahiro Yoshimoto,