Article ID Journal Published Year Pages File Type
5462954 Materials Letters 2017 5 Pages PDF
Abstract
In this study, doping of Sb2Te3 with silicon carbide has been proposed to enhance the optical and electrical properties of Sb2Te3. The silicon carbide-doped Sb2Te3 (Sb2Te3-SiC)-based phase change memory cell can be triggered by a 10 ns electric pulse, indicating its excellent electrical properties. Furthermore, femtosecond pulses are used to study the reversible phase transition processes. The large reflectivity ratio of Sb2Te3-SiC is beneficial for achieving distinguishable logical states in optical applications. X-ray diffraction and transmission electron microscopy results show the SiC doping plays an important role in refining the grain size of Sb2Te3, producing smaller grain.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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