Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5462954 | Materials Letters | 2017 | 5 Pages |
Abstract
In this study, doping of Sb2Te3 with silicon carbide has been proposed to enhance the optical and electrical properties of Sb2Te3. The silicon carbide-doped Sb2Te3 (Sb2Te3-SiC)-based phase change memory cell can be triggered by a 10Â ns electric pulse, indicating its excellent electrical properties. Furthermore, femtosecond pulses are used to study the reversible phase transition processes. The large reflectivity ratio of Sb2Te3-SiC is beneficial for achieving distinguishable logical states in optical applications. X-ray diffraction and transmission electron microscopy results show the SiC doping plays an important role in refining the grain size of Sb2Te3, producing smaller grain.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yun Meng, Liangcai Wu, Zhitang Song, Shuai Wen, Minghui Jiang, Jingsong Wei, Yang Wang,