Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy

A study of the interface between La2O3 films and Si substrates was conducted with the aim to understand interfacial change during the film growth process. A detailed comparison of Si 2s, 2p, and O 1s photoelectron spectra of the La2O3/Si interface formed on clean silicon substrates indicates that a La-silicate phase forms rapidly at the interface during the film deposition process. A detailed analysis of La2O3 films of varying thicknesses showed that as film layering increased, the substrates became coated with an La silicate interfacial layer which prevents the formation of SiOX. Moreover, the La2O3 forms when film thickness reaches a certain value, leading to practical application of La2O3 in the manufacture of MOSFET transistors.