Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5463063 | Materials Letters | 2017 | 4 Pages |
Abstract
In this letter, the potential of single crystalline 4H-polytype silicon carbide (4H-SiC) based microelectromechanical structures as resistance thermometer for high temperature sensing were explored. A dopant-selective photoelectrochemical etching process was applied to release the sensing element - suspended microstructures on 4H-SiC substrate. Residual stress and stress gradient in the microstructure before and after release was examined by micro-Raman spectroscopy. Electrical resistance of the suspended microstructures at different temperatures were characterized and analyzed by a temperature-dependent electron mobility model.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Colton Wells, Jheng-Yi Jiang, Ting-Fu Chang, Chih-Fang Huang, Jiaxin Ke, Weijun Luo, Guangrui Xia, Kuan Yew Cheong, Feng Zhao,