| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5463732 | Materials Letters | 2017 | 5 Pages |
Abstract
Quaternary semiconductor thin films are an emerging material for the development of photoelectrochemical (PEC) cells. Here, we are presenting the photoelectrochemical properties of Co1âxâyZnxCdyS thin films. Chemical synthesis of quaternary Co1âxâyZnxCdyS thin films has been reported previously. As-deposited thin films were studied for morphological features using atomic force microscopy (AFM). The photoelectrochemical (PEC) properties of chemically deposited Co1âxâyZnxCdyS thin films have been studied. PEC cell of configuration Co1âxâyZnxCdyS/0.5Â M KCl/C was fabricated to study the various PEC parameters in dark and under illumination. The maximum efficiency and fill factor were found to be 1.06% and 0.39 respectively for composition x=y=0.15.
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Authors
S.S. Kamble, A. Sikora, G.T. Chavan, S.T. Pawar, N.N. Maldar, L.P. Deshmukh,