| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5463833 | Materials Letters | 2017 | 13 Pages |
Abstract
Anatase TiO2 films with different level of (0 0 1) preferred orientation were implanted by N ion beam and N doped TiO2 films were obtained. XPS results showed N was about 7.86 ± 0.65 at.% for all N doped TiO2 films, which was chemically bonded as Ti-N and O-N bonds. The ratio of Ti-N/O-N was about 0.81 and 1.56 for N doped TiO2 film with and without (0 0 1) preferred orientation, respectively. Based on the schematic illustration of unrelaxed clean (0 0 1) and (1 0 1) surface of anatase TiO2, the changing of N chemical bond structure and Ti-N/O-N ratio were logically discussed.
Related Topics
Physical Sciences and Engineering
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Authors
Jindong Liu, Shiping Zhao, Hualin Wang, Yunxian Cui, Shimin Liu, Weiwei Jiang, Nan Wang, Chaoqian Liu, Weiping Chai, Wanyu Ding,